Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

膨胀的热夸克胶子物质的中等质量双轻子的增强

基于一个描述夸克胶子火柱演化的相对论流体力学模型,研究了夸克相、强子相互作用以及非热过程(DrellYan对、粲强子衰变)的中等质量双轻子的产生.发现由于相边对夸克胶子物质演化的影响和RHIC能量核碰撞产生的夸克胶子物质具有高的初始温度,夸克相对双轻子的贡献显著增强,比那些来自强子相互作用的贡献重要,甚至能与来自非热的贡献比较.表明中等质量双轻子的增强是一个在核碰撞中产生了夸克胶子物质的可能信号. 关键词： 夸克-胶子物质 双轻子增强 相对论流体力学模型     

激光打孔对氮化铝绝缘性能的影响

氮化铝陶瓷具有优良的绝缘和导热性能,是传导冷却超导电力装置绝缘与导热连接件的首选,激光切割是对其进行加工的最有效方法,但激光切割可能对其绝缘性能产生影响,进而影响超导电力装置的安全运行。基于此,通过对激光打孔前后氮化铝基片孔周区域绝缘电阻的测量、金相结构和扫描电镜成分的比较,分析了激光打孔对氮化铝绝缘性能的影响,并总结了选用氮化铝基片作为超导电力装置电流引线的绝缘与导热垫片应注意的问题。     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength.     

A TVD Type Wavelet-Galerkin Method for Hamilton-Jacobi Equations

In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities.     

基于NURBS的叶片全三维气动优化设计

采用NURBS对叶轮机械叶片的关键截面和基迭线进行参数化表达,该表达方法为基于现代优化算法的叶片粘性气动最优化设计提供设计变量,以实现对叶片截面和叶片基迭线弯、倾、扭、掠变形的控制。该方法编写成的叶片全三维控制模块和网格自动生成程序、CFD程序集成到商业软件iSIGHT中,构成了叶片全三维粘性气动优化设计平台。在该平台上选用ASA成功进行了某透平静叶片的全三维粘性气动最优化设计。实验结果表明通过同时改变叶片截面和叶片基迭线的方法能够有效地抑制叶片的二次流损失,因此该设计平台在叶片气动优化设计中有广阔的应用前景。     

Engineering issue study of triple harmonic method for in situ flying height analysis

In situ flying height testing technology is becoming more and more important in slider–disk interaction analysis and manufacturing quality control of disk drives and head-related components. Triple harmonic method is a quite promising choice for in situ flying height analysis, compared with other in situ methods reported up to now. This paper reports results of investigations on engineering issues of applying triple harmonic method for in situ flying height analysis. The paper reports results of analysis on the effects of various testing conditions on flying height testing repeatability and accuracy. Results suggest that working at reasonable high channel density and working on the ratio between third and first harmonics will be an advantage in terms of both flying height testing sensitivity and testing repeatability. Comparing with media thickness effect, the gap-length variation among different heads will be important if it is to study flying height difference among different heads and the testing is at high channel density. Also, it is suggested to work at AC erased track, in order to reduce the non-linearity caused by hard transition.     

An implicit method for linear ill‐posed problems with perturbed operators

An implicit iterative method is applied to solving linear ill‐posed problems with perturbed operators. It is proved that the optimal convergence rate can be obtained after choosing suitable number of iterations. A generalized Morozov's discrepancy principle is proposed for the problems, and then the optimal convergence rate can also be obtained by an a posteriori strategy. The convergence results show that the algorithm is a robust regularization method. Copyright © 2006 John Wiley & Sons, Ltd.     

新型金属杂冠醚配合物18-MC-6[Mn6(4-Amashz)6(DMF)6]·12DMF的合成

合成了一种新型金属杂冠醚配合物[Mn6(4-amashz)6(DMF)6]·12DMF,并用X射线衍射法对其结构进行了表征.研究了该化合物修饰金电极催化氧还原的性质,结果表明,该化合物具有平面碟状结构,对在碱性溶液中的氧有显著的催化还原作用.